The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Aug. 17, 2018
Toshiba Memory Corporation, Tokyo, JP;
Toshiyuki Iwamoto, Mie Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A storage device includes a substrate, first and second insulation layers extending in a first direction, a first conductive layer extending in the first direction between the first and second insulation layers in a second direction perpendicular to the substrate, a second conductive layer extending in the second direction, a variable resistance layer provided between the first and second conductive layers, and a first layer having a first surface contacting the first insulating layer and a second surface contacting the resistance-variable layer in a third direction. The first surface has an incline with respect to the third direction from a first portion to a second portion that is closer to the second surface than the first portion. A distance between the first portion and the second insulating layer in the second direction is larger than a distance between the second portion and the second insulating layer.