The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Jul. 20, 2017
Applicant:

Google Llc, Mountain View, CA (US);

Inventors:

Chung Chun Wan, San Jose, CA (US);

Boyd Albert Fowler, Sunnyvale, CA (US);

Assignee:

Google LLC, Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/3745 (2011.01); H04N 9/04 (2006.01); H04N 5/33 (2006.01); H04N 5/225 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 27/1465 (2013.01); H01L 27/14603 (2013.01); H01L 27/14609 (2013.01); H01L 27/14621 (2013.01); H01L 27/14634 (2013.01); H01L 27/14641 (2013.01); H01L 27/14645 (2013.01); H01L 27/14649 (2013.01); H04N 5/3745 (2013.01); H04N 9/045 (2013.01); H04N 5/2257 (2013.01); H04N 5/332 (2013.01);
Abstract

An image sensor is described having a pixel array. The pixel array has a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes. The unit cell has a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell has a second capacitor that is coupled to the infra-red photodiode through a first transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The first capacitor is coupled to the infra-red photodiode through a second transfer gate transistor to receive charge from the infra-red photodiode during the time-of-flight exposure.


Find Patent Forward Citations

Loading…