The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Jan. 26, 2017
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Hisao Ochi, Sakai, JP;
Tohru Daitoh, Sakai, JP;
Hajime Imai, Sakai, JP;
Tetsuo Fujita, Sakai, JP;
Hideki Kitagawa, Sakai, JP;
Tetsuo Kikuchi, Sakai, JP;
Masahiko Suzuki, Sakai, JP;
Teruyuki Ueda, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
An active matrix substrate includes a first TFT (), a second TFT () disposed per pixel, and a circuit including the first TFT. The first and second TFTs each include a gate electrode (A,B), a gate insulating layer (), an oxide semiconductor layer (A,B), and source and drain electrodes in contact with an upper surface of the oxide semiconductor layer. The oxide semiconductor layer (A,B) has a stacked structure including a first semiconductor layer () in contact with the source and drain electrodes and a second semiconductor layer that is disposed on a substrate-side of the first semiconductor layer and that has a smaller energy gap than the first semiconductor layer. The oxide semiconductor layers (A) and (B) are different from each other in terms of the composition and/or the number of stacked layers. The first TFT has a larger threshold voltage than the second TFT.