The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Mar. 21, 2018
Ablic Inc., Chiba-shi, Chiba, JP;
Tomomitsu Risaki, Chiba, JP;
ABLIC INC., Chiba, JP;
Abstract
Provided is a semiconductor device which has a non-volatile memory including: a semiconductor substrate; a tunnel insulating film formed on a surface of the semiconductor device; a floating gate formed on the tunnel insulating film; a memory cell transistor drain region and a memory cell transistor source region formed from the surface to an inside of the semiconductor substrate in a vicinity of both ends of the floating gate; a first interface formed between the semiconductor substrate and the tunnel insulating film; and a second interface formed between the floating gate and the tunnel insulating film. The first interface and the second interface form an uneven structure having a curvature that changes at an identical period with respect to a place in sectional view.