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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10262998 B1

PDFFull Text
Date of Patent:
Apr. 16, 2019

Filed:

Nov. 08, 2016

Semiconductor device and method of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyun-chul Sagong, Hwaseong-si, KR;

Sang-woo Pae, Seongnam-si, KR;

Sung-young Yoon, Gongju-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Onello & Mello, LLP

Primary Examiner:

Marcos D Pizarro Crespo

Assistant Examiner:

Shannon G Yi

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823807 (2013.01); H01L 27/092 (2013.01); H01L 27/0922 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/78 (2013.01); H01L 21/823821 (2013.01); H01L 27/0207 (2013.01);
Abstract

A semiconductor device includes a substrate including a first active area extending in a first direction and a second active area extending in a second direction and connected to the first active area; first and second gate structures respectively crossing the first and second active areas; a first region in an area where the first and second active areas are connected to each other, the first region being on a first side of each of the first and second gate structures; a second region in the first active area on the other side of the first gate structure; and a third region formed in the second active area on the other side of the second gate structure.

Find Patent Forward Citations

Sagong, Hyun-chul. (2019). Semiconductor device and method of manufacturing the same (U.S. Patent No. 10262998). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10262998

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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