The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Apr. 24, 2017
Applicant:
Avago Technologies International Sales Pte. Limited;
Assignee:
Avago Technologies International Sales Pte. Limited, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 23/5283 (2013.01); H01L 29/0649 (2013.01); H01L 29/16 (2013.01); H01L 29/7831 (2013.01); H01L 29/7851 (2013.01);
Abstract
A FinFET semiconductor device having semiconductor body including a source region of a first type, and a drain region of a second type, and a drain-region shallow trench isolation (STI) disposed in the drain region. The device includes a plurality of fins attached to the semiconductor body and extending across the semiconductor body, a channel gate disposed over a section of the plurality of fins; a supplemental gate disposed on the drain-region STI.
Quick Actions:
Liu, Qing. (2019). Finfet ldmos devices with additional dynamic control (U.S. Patent No. 10262994). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10262994
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile