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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10262945 B1

PDFFull Text
Date of Patent:
Apr. 16, 2019

Filed:

Apr. 28, 2017

Three-dimensional array device having a metal containing barrier and method of making thereof

Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Raghuveer S. Makala, Campbell, CA (US);

Murshed Chowdhury, Fremont, CA (US);

Keerti Shukla, Saratoga, CA (US);

Tomohisa Abe, Yokkaichi, JP;

Yao-Sheng Lee, Tampa, FL (US);

James Kai, Santa Clara, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Evan Pert

Assistant Examiner:

Changhyun Yi

Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 27/115 (2017.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 23/535 (2006.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 29/167 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01); H01L 23/53266 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01); H01L 29/167 (2013.01);
Abstract

A three-dimensional memory device includes driver transistors containing boron doped semiconductor active regions, device contact via structures in physical contact with the boron doped semiconductor active regions, the device contact via structures containing at least one of tantalum, tungsten, and cobalt, and a three-dimensional memory array located over the driver transistors and including an alternating stack of insulating layers and electrically conductive layers and memory structures vertically extending through the alternating stack.

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