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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10262912 B1

PDFFull Text
Date of Patent:
Apr. 16, 2019

Filed:

Apr. 15, 2015

Semiconductor device

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Takanobu Kajihara, Tokyo, JP;

Katsuhiko Omae, Tokyo, JP;

Shunsuke Fushie, Tokyo, JP;

Muneaki Mukuda, Tokyo, JP;

Daisuke Nakashima, Tokyo, JP;

Masahiro Motooka, Tokyo, JP;

Hiroyuki Miyanishi, Tokyo, JP;

Yuki Nakamatsu, Tokyo, JP;

Junya Suzuki, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorneys:

Sughrue Mion, PLLC

Richard C. Turner

Primary Examiner:

A Sefer

Int. Cl.
CPC ...
H01L 23/051 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/67 (2006.01); H01L 23/433 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 23/051 (2013.01); H01L 21/4846 (2013.01); H01L 21/565 (2013.01); H01L 21/6715 (2013.01); H01L 23/295 (2013.01); H01L 23/3107 (2013.01); H01L 23/4334 (2013.01); H01L 23/49524 (2013.01); H01L 23/49541 (2013.01); H01L 24/33 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); H01L 21/4821 (2013.01); H01L 21/4842 (2013.01); H01L 23/49513 (2013.01); H01L 23/49548 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/37147 (2013.01); H01L 2224/37599 (2013.01); H01L 2224/40 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/84801 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19105 (2013.01);
Abstract

In a semiconductor device, a first skirt portion molded from a first mold resin and a second skirt portion molded from a second mold resin are provided on a heat dissipating surface of a lead frame. Also, a thinly-molded portion is molded integrally with the second skirt portion from the second mold resin. According to this kind of configuration, adhesion between the thinly-molded portion and lead frame is high, and the semiconductor device with excellent heat dissipation and insulation is obtained.

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