The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Oct. 24, 2018
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventor:

Tsutomu Kiyosawa, Toyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/66 (2006.01); H01L 23/522 (2006.01); H01L 21/8252 (2006.01); H01L 21/82 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 22/22 (2013.01); H01L 21/8213 (2013.01); H01L 21/8252 (2013.01); H01L 23/5226 (2013.01); H01L 29/1037 (2013.01); H01L 29/1095 (2013.01); H01L 29/66 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01); H01L 29/7827 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract

Semiconductor layer is formed on semiconductor substrate. Semiconductor layer has a plurality of well regions in a surface remote from semiconductor substrate. Semiconductor layer includes drift region in addition to the plurality of well regions. The plurality of well regions each include body region, source region, and contact region. Source region is in contact with body region. Contact region is in contact with both body region and source region. Body region, source region, and source wire are at an identical potential because of contact region. Semiconductor layer includes ineffective region R at the surface remote from semiconductor substrate.


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