The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Sep. 21, 2016
Applicant:

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Toshihiro Sekigawa, Tsukuba, JP;

Masakazu Hioki, Tsukuba, JP;

Hanpei Koike, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/08 (2006.01); H01L 27/092 (2006.01); H03K 17/00 (2006.01); H03K 17/693 (2006.01); H03K 19/094 (2006.01); H03K 19/0944 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8238 (2013.01); H01L 27/08 (2013.01); H01L 27/092 (2013.01); H03K 17/00 (2013.01); H03K 17/693 (2013.01); H03K 19/094 (2013.01); H03K 19/0944 (2013.01);
Abstract

The multiplexer includes a plurality of transmission gates each formed by four-terminal double insulated gate N-type and P-type field effect transistors connected in parallel. One of gates of the N-type gate field effect transistor is connected to a first threshold voltage control node, and a first resistor is connected between the first threshold voltage control node and a first threshold voltage control voltage source. One of gates of the P-type gate field effect transistor is connected to a second threshold voltage control node, and a second resistor is connected between the second threshold voltage control node and a second threshold voltage control voltage source.


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