The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Aug. 01, 2017
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Takahiro Miyakura, Toyama, JP;
Atsushi Moriya, Toyama, JP;
Naoharu Nakaiso, Toyoma, JP;
Kensuke Haga, Toyama, JP;
Assignee:
KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); C30B 25/06 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); C30B 25/00 (2006.01); C30B 25/02 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/04 (2006.01); C23C 16/24 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32055 (2013.01); C23C 16/045 (2013.01); C23C 16/24 (2013.01); C23C 16/30 (2013.01); C23C 16/45523 (2013.01); C23C 16/45531 (2013.01); C23C 16/45534 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); C30B 25/005 (2013.01); C30B 25/02 (2013.01); C30B 25/06 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02233 (2013.01); H01L 21/02636 (2013.01); H01L 29/66636 (2013.01);
Abstract
There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.