The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Dec. 30, 2016
Sunpower Corporation, San Jose, CA (US);
Taiqing Qiu, Los Gatos, CA (US);
Glyn Jeremy Reynolds, Cupertino, CA (US);
Xiao Bai, Fremont, CA (US);
SunPower Corporation, San Jose, CA (US);
Abstract
Point-of-use enrichment of gas mixtures for semiconductor structure fabrication, and systems for providing point-of-use enrichment of gas mixtures, are described herein. In an example, a system for fabricating a semiconductor structure includes a process chamber for processing a substrate of a semiconductor structure. A gas supply is coupled to the process chamber. A point-of-use gas enrichment module is coupled to the gas supply. The point-of-use gas enrichment module is configured to concentrate a first gas composition to provide a second gas composition to the gas supply for the process chamber. The second gas composition has a relative amount of a hydride species greater than a relative amount of corresponding hydride species in the first gas composition.