The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
May. 08, 2017
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Fan Zhang, Fremont, CA (US);
Yu Cai, San Jose, CA (US);
Chenrong Xiong, San Jose, CA (US);
Aman Bhatia, San Jose, CA (US);
HyungSeok Kim, Santa Clara, CA (US);
David Pignatelli, Saratoga, CA (US);
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 5/02 (2006.01); G11C 7/18 (2006.01); G11C 16/34 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 5/025 (2013.01); G11C 7/18 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/3495 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01);
Abstract
Disclosed are techniques for selecting one or more reference voltages for performing one or more operations on a memory cell based on a determined layer of a three-dimensional memory construct to which the memory cell belongs. The one or more operations can include read or write operations. The memory cell can be a flash memory cell.