The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Oct. 07, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Iddo Naiss, Ramat Gan, IL;

Noam Livne, Ramat Gan, IL;

Elona Erez, Ramat Gan, IL;

Jun Jin Kong, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G11C 11/56 (2006.01); G11C 29/52 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G06F 11/1068 (2013.01); G11C 11/5628 (2013.01); G11C 29/52 (2013.01);
Abstract

A method for storing data multi-level cell (MLC) memory includes receiving data to be stored. The received data is divided into units of x bits, where x is an integer greater than or equal to 3. Each of the units of x bits is stored over a span of y memory cells of the MLC memory. Here, y is an integer greater than or equal to 2. At least one bit of each of the x bits is stored only partially in a first memory cell of the span of y memory cells and the at least one bit is also stored, only partially, in a second memory cell of the span of y memory cells such that the at least one bit cannot be interpreted without reading both the first and second memory cell of the span of y memory cells.


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