The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Mar. 03, 2017
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Katsuhiko Ueki, Katsushika Tokyo, JP;

Sumio Kuroda, Yokohama Kanagawa, JP;

Yasuyuki Ozawa, Tama Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G06F 11/07 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); H03M 13/11 (2006.01); H03M 13/00 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1048 (2013.01); G06F 11/073 (2013.01); G06F 11/076 (2013.01); G11C 16/26 (2013.01); G11C 16/3495 (2013.01); H03M 13/1105 (2013.01); H03M 13/611 (2013.01);
Abstract

A memory system includes a memory that includes a plurality of memory cells, and a controller. During a write operation to write data to the memory cells, the controller encodes first data to be written at a first code rate. During a read operation to read data from the memory cells, the controller decodes second data read from the memory cells at the first code rate. The controller changes the first code rate to a second code rate that is less than the first code rate upon determining that the number of error bits during the read operation of the second data is above a threshold number for error bits or upon determining that the number of memory cells having a threshold voltage that is in a voltage range that includes a read voltage is above a threshold number for memory cells.


Find Patent Forward Citations

Loading…