The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Dec. 01, 2015
Applicant:
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Inventor:
Hubert Rousseau, Marseilles, FR;
Assignee:
STMicroelectronics (Rousset) SAS, Rousset, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/00 (2006.01); G06F 3/06 (2006.01); G06F 12/02 (2006.01); G06F 11/14 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/064 (2013.01); G06F 3/0604 (2013.01); G06F 3/065 (2013.01); G06F 3/0616 (2013.01); G06F 3/0644 (2013.01); G06F 3/0652 (2013.01); G06F 3/0679 (2013.01); G06F 11/1435 (2013.01); G06F 11/1471 (2013.01); G06F 12/0246 (2013.01); G06F 12/0253 (2013.01); G11C 16/10 (2013.01); G11C 16/105 (2013.01); G06F 2212/7202 (2013.01); G06F 2212/7205 (2013.01); G06F 2212/7207 (2013.01); G06F 2212/7211 (2013.01);
Abstract
A method for writing and reading data in memory cells, comprising, when writing a data in a block of a first memory zone, a step consisting of writing in a second memory zone a temporary information structure metadata comprising a start flag, an identifier of the temporary information structure, an information about the location of the block in the first memory zone, and a final flag, and, after a power on of the first memory zone, searching for an anomaly in temporary information structures present in the second memory zone.