The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Nov. 01, 2017
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Yunqing Dai, Shanghai, CN;
Jian Wang, Shanghai, CN;
SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Abstract
An optimization method for overlay error compensation is disclosed. The method comprises setting process parameters for each semiconductor layer of a semiconductor device corresponding to a run path formed by different lithographic apparatus which sequentially process target semiconductor layers from a first target layer to a latest target layer; measuring overlay errors between an actual and a theoretical exposed patterns of the first semiconductor layer; selecting a group of process parameters corresponding to the run path from the first target layer to the latest target layer aligned by the current semiconductor layer; after exposing the current semiconductor layer using the selected process parameters, measuring overlay errors between the current semiconductor layer and its target layer; and correcting the selected process parameters according to the overlay errors between the current semiconductor layer and its target layer, and the overlay errors between the actual and theoretical exposed patterns of the first semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile