The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Feb. 27, 2017
Mitsubishi Electric Corporation, Chiyoda-ku, Tokyo, JP;
Eiji Yoshikawa, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor differential pressure sensor element is such that as strain sensitive elements are disposed only inside a diaphragm, and strain relaxation grooves are provided along the diaphragm, it is difficult for thermal stress caused by expansion or contraction of a case to propagate to the strain sensitive elements, thus suppressing characteristic fluctuations resulting from a change in external temperature. Also, as a configuration is such that a sacrificial column is provided inside a depressed portion, and that the diaphragm is held by the sacrificial column in a diaphragm formation step which thins a second semiconductor substrate and a functional element formation step which repeatedly implements a cleaning step, breakage of the diaphragm can be prevented, thus achieving a significant improvement in yield.