The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Sep. 09, 2016
Mie University, Mie, JP;
Hideto Miyake, Mie, JP;
MIE UNIVERSITY, Mie, JP;
Abstract
A method for manufacturing a nitride semiconductor substrate includes: a preparation step of preparing a sapphire substrate; and a buffer layer forming step of forming an AlN buffer layer on the sapphire substrate, wherein the buffer layer forming step includes: a group III nitride semiconductor forming step of forming a precursor of an AlN buffer layer on the sapphire substrate; and an annealing step of annealing the sapphire substrate on which the precursor of the AlN buffer layer is formed in a gas-tight state in which a principal surface of the precursor of the AlN buffer layer is covered with a cover member (such as a sapphire substrate) for inhibiting a component of the group III nitride semiconductor from dissociating from the principal surface of the formed precursor of the AlN buffer layer.