The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Jun. 22, 2016
Applicant:

Sumitomo Electric Hardmetal Corp., Itami-shi, JP;

Inventors:

Anongsack Paseuth, Sorachi-gun, JP;

Hideaki Kanaoka, Sorachi-gun, JP;

Satoshi Ono, Sorachi-gun, JP;

Shinya Imamura, Sorachi-gun, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); B23B 27/14 (2006.01); C23C 16/36 (2006.01); B23B 51/04 (2006.01); B23C 5/22 (2006.01); B23F 21/00 (2006.01); C23C 16/455 (2006.01); C23C 30/00 (2006.01);
U.S. Cl.
CPC ...
B23B 27/148 (2013.01); B23B 51/0466 (2013.01); B23C 5/2217 (2013.01); B23F 21/005 (2013.01); C23C 16/34 (2013.01); C23C 16/36 (2013.01); C23C 16/45523 (2013.01); C23C 30/00 (2013.01);
Abstract

A surface-coated cutting tool includes a base material and a coating. A hard layer in the coating includes a plurality of crystal grains having a sodium chloride-type crystal structure. When the angle of intersection between the normal direction to (111) plane that is a crystal plane of the crystal grain and the normal direction to the surface of the base material is measured, a proportion A of the crystal grains having the angle of intersection of 0 degree or more to less than 20 degrees is 50% or more. The length of Σ3 grain boundaries is less than 50% of the length of Σ3-29 grain boundaries. The crystal grain has a layered structure in which a first layer and a second layer are alternately stacked. The total thickness of the first layer and the second layer adjacent to each other is 3 to 40 nm.


Find Patent Forward Citations

Loading…