The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

Jan. 11, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Kyu-Ik Cho, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/378 (2011.01); H04N 5/376 (2011.01); H04N 5/374 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 5/378 (2013.01); H01L 27/1464 (2013.01); H04N 5/374 (2013.01); H04N 5/3765 (2013.01);
Abstract

A ramp signal generator is provided. The ramp signal generator includes a bias generation circuit, a transferring switch, a sampling capacitor, a current cell circuit, a current to voltage converter and a tuning circuit. The bias generation circuit generates a bias voltage. The transferring switch transfers the bias voltage to a sampling node in response to a first switching control signal. The sampling capacitor samples the bias voltage. The current cell circuit provides a first output node with a first ramping current in response to a sampled bias voltage and switching code pairs. The current to voltage converter includes a first load resistor to convert the first ramping current to a first ramp signal. The tuning circuit includes a capacitor that couples the sampled bias voltage to the first ramp signal, and adjusts a degree of nonlinearity of the first ramp signal in response to a tuning signal.


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