The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

May. 10, 2016
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Shiqun Gu, San Diego, CA (US);

Chengjie Zuo, San Diego, CA (US);

Steve Fanelli, San Marcos, CA (US);

Thomas Gee, Poway, CA (US);

Young Kyu Song, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04B 1/48 (2006.01); H01L 21/84 (2006.01); H01L 23/48 (2006.01); H01L 23/60 (2006.01); H01L 23/66 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 49/02 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H04B 1/48 (2013.01); H01L 21/76251 (2013.01); H01L 21/76898 (2013.01); H01L 21/84 (2013.01); H01L 23/481 (2013.01); H01L 23/5223 (2013.01); H01L 23/5227 (2013.01); H01L 23/60 (2013.01); H01L 23/66 (2013.01); H01L 27/1203 (2013.01); H01L 28/00 (2013.01); H01L 28/10 (2013.01); H01L 28/60 (2013.01); H01L 29/0649 (2013.01); H01L 2223/6672 (2013.01); H01L 2223/6677 (2013.01);
Abstract

An integrated radio frequency (RF) circuit structure may include a resistive substrate material and a switch. The switch may be arranged in a silicon on insulator (SOI) layer supported by the resistive substrate material. The integrated RF circuit structure may also include an isolation layer coupled to the SOI layer. The integrated RF circuit structure may further include a filter, composed of inductors and capacitors. The filter may be arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material. In addition, the switch may be arranged on a first surface of the isolation layer.


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