The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Jun. 26, 2015
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Universite Paris Diderot, Paris, FR;
Guillaume Crosnier, Orsay, FR;
Fabrice Raineri, Paris, FR;
Rama Raj, Paris, FR;
Paul Monnier, Saint-Fargeau Ponthierry, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Universite Paris Diderot, Paris, FR;
Abstract
A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers () forming an assembly of quantum wells are placed between a lower layer () of a first conductivity type and an upper layer () of a second conductivity type. Holes () are drilled right through the thickness of the rib, wherein the lower layer includes first extensions () that extend laterally on either side of the rib, and that are coated with first metallizations () that are located a distance away from the rib. The stack includes second extensions () that extend longitudinally beyond said rib, and that are coated with second metallizations ().