The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

Oct. 23, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Seon-Jeong Lim, Yongin-si, KR;

Kyung Bae Park, Hwaseong-si, KR;

Dong-Seok Leem, Hwaseong-si, KR;

Moon Gyu Han, Yongin-si, KR;

Kyu Sik Kim, Yongin-si, KR;

Takkyun Ro, Hwaseong-si, KR;

Kwang Hee Lee, Yongin-si, KR;

Yong Wan Jin, Seoul, KR;

Chul Joon Heo, Busan, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0072 (2013.01); H01L 27/307 (2013.01); H01L 51/001 (2013.01); H01L 51/008 (2013.01); H01L 51/4253 (2013.01); H01L 2251/308 (2013.01);
Abstract

Disclosed are an organic photoelectronic device including a first electrode and a second electrode facing each other and an active layer interposed between the first electrode and the second electrode, wherein the active layer includes a p-type semiconductor compound represented by the formula CR—RONand an n-type semiconductor compound having a maximum absorption peak at a wavelength region of about 500 nm to about 600 nm, and an image sensor including the organic photoelectronic device.


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