The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Mar. 20, 2013
Applicant:
Lg Siltron Inc., Gyeongsangbuk-do, KR;
Inventors:
Jung-Hyun Eum, Seoul, KR;
Kwang-Yong Choi, Seoul, KR;
Jae-Ho Song, Gyeonggi-do, KR;
Dong-Kun Lee, Gyeongsangbuk-do, KR;
Kye-Jin Lee, Gyeongsangbuk-do, KR;
Young-Jae Choi, Gyeonggi-do, KR;
Assignee:
SK Siltron Co., Ltd., , KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/207 (2006.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02507 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 33/12 (2013.01); H01L 33/325 (2013.01); H01L 33/007 (2013.01);
Abstract
Provided is a semiconductor substrate including a growth substrate, one or more compound semiconductor layers disposed on the growth substrate, and one or more control layers disposed between the compound semiconductor layers. Each control layer includes multiple nitride semiconductor layers including at least Al.