The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Aug. 26, 2016
Applicant:
Kyocera Corporation, Kyoto-shi, Kyoto, JP;
Inventor:
Toru Nakayama, Fukuoka, JP;
Assignee:
KYOCERA CORPORATION, Kyoto-Shi, Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/074 (2012.01); H01L 31/0352 (2006.01); B82Y 30/00 (2011.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 31/0352 (2013.01); H01L 31/074 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); Y02E 10/50 (2013.01);
Abstract
A photoelectric converter includes two semiconductor layers forming a p/n junction as a photoelectric conversion layer. At least one semiconductor layer of the two semiconductor layers is a quantum dot integrated film, and the quantum dot integrated film includes two or greater quantum dot layers having different energy levels. In a case that the quantum dot integrated film is a p-type, a quantum dot layer having a large difference between an energy level (B) of a valence band and a Fermi level (E) is disposed closer to a p/n junction surface.