The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Sep. 20, 2018
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/02271 (2013.01); H01L 21/02529 (2013.01); H01L 21/31111 (2013.01); H01L 29/0696 (2013.01); H01L 29/0865 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/45 (2013.01); H01L 29/513 (2013.01); H01L 29/66068 (2013.01); H01L 29/66734 (2013.01); H01L 21/02255 (2013.01);
Abstract
In a semiconductor device, in a gate insulating film which is formed on/over an inner wall of a trench, the film thickness of a part of a gate insulating film formed so as to cover a corner of the trench is made thicker than the film thickness of apart of the gate insulating film part formed on/over a side face of the trench.