The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Oct. 09, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
Koichi Fujita, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device is provided with an N-type drift layer, a P-type diffusion well region provided on a surface part of the N-type drift layer, a P-type channel well region, an N-type diffusion well region, a gate insulating film, a gate electrode laminated on the gate insulating film, a drain trench, a field plate provided in the drain trench with a silicon oxide film and an insulating film interposed therebetween and a field plate electrode formed on the field plate. The field plate is tapered toward a base part of the drain trench. A distance between a side wall of the drain trench and a side face of the field plate is increased toward the base part side.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile