The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Feb. 02, 2017
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Assignee:
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 21/28 (2006.01); H01L 23/34 (2006.01); H01L 29/06 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/74 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/743 (2013.01); H01L 21/764 (2013.01); H01L 21/76879 (2013.01); H01L 21/76897 (2013.01); H01L 23/528 (2013.01);
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a semiconductor layer formed on the substrate. The semiconductor structure includes an isolation structure through the semiconductor layer, and the isolation structure has an opening with a first width, and the isolation structure has a vacuum gap. The semiconductor structure also includes a contact plug structure through the semiconductor layer, and the contact plug structure has an opening with a second width, and the second width is greater than the first width.