The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Sep. 14, 2017
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Inventors:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/0254 (2013.01); H01L 21/02576 (2013.01); H01L 21/26546 (2013.01); H01L 21/30617 (2013.01); H01L 21/3245 (2013.01); H01L 29/1095 (2013.01); H01L 29/2003 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01);
Abstract
A semiconductor device includes an outside-of-well n-type region, a p-type well region surrounded by the outside-of-well n-type region, an inside-of-well n-type region, and a gate electrode. The outside-of-well n-type region includes an impurity low-concentration region that is in contact with the p-type well region, and an impurity high-concentration region that is separated from the p-type well region by the impurity low-concentration region.