The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Feb. 25, 2016
Rf Micro Devices, Inc., Greensboro, NC (US);
Subrahmanyam V. Pilla, Plano, TX (US);
Tso-Min Chou, Plano, TX (US);
Qorvo US, Inc., Greensboro, NC (US);
Abstract
The present disclosure relates to a vertical gallium-nitride (GaN) power field-effect transistor (FET) with a field plate structure. The vertical GaN power FET includes a conductive substrate, a drift region, a field plate structure, a channel region with tapered side walls, a gate dielectric region, a gate contact, a drain contact and source contacts. The field plate structure includes a lower layer formed of pi p-type graded AlGaN and a upper layer formed of p-type GaN. The field plate structure utilizes the charge separation at the interface between the lower layer and the upper layer to achieve high breakdown voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile