The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

Feb. 07, 2018
Applicant:

AU Optronics Corporation, Hsin-chu, TW;

Inventor:

Chi-Ho Chang, Hsin-chu, TW;

Assignee:

AU OPTRONICS CORPORATION, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/12 (2006.01); H01L 23/535 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01); H01L 29/41733 (2013.01); H01L 29/66742 (2013.01); H01L 29/66765 (2013.01); H01L 29/66969 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

A pixel structure and a fabrication method thereof are provided, and the fabrication method includes steps as follows. A gate and a scan line connected to the gate electrode are formed on a substrate. An insulation layer is formed on the substrate and is patterned to form an opening corresponding to the gate electrode. A gate insulation layer is formed to cover the gate electrode and the scan line. A channel layer is formed on the gate insulation layer and is located in the opening. A first ohmic contact layer and a second ohmic contact layer are formed on the channel layer and are located in the opening. A source electrode, a drain electrode and a data line connected to the source electrode are formed on the first ohmic contact layer and the second ohmic contact layer. A first electrode is formed and is electrically connected to the drain electrode.


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