The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

Jun. 26, 2017
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventor:

Junichi Ariyoshi, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 23/522 (2006.01); H01L 27/11565 (2017.01); H01L 27/11582 (2017.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01);
Abstract

Electrical short caused by misalignment of source select level contact via structure and support pillar structures can be prevented by modifying the pattern of the support pillar structures such that the support pillar structures are omitted from the area in which source select gate contact via structures are formed. The insulating layer at the level overlying the source select level electrically conductive layer can have a sufficient thickness to prevent deformation during formation of the backside recesses. A minimum lateral separation distance between the source select level contact via structure and the support pillar structures is greater than any minimum lateral separation distance between the word line level contact via structures and the support pillar structures.


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