The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Aug. 02, 2018
Applicant:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Assignee:
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H02M 3/158 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/823456 (2013.01); H01L 21/823487 (2013.01); H01L 27/0207 (2013.01); H01L 29/0696 (2013.01); H01L 29/1079 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/66621 (2013.01); H02M 3/158 (2013.01); H01L 21/823412 (2013.01);
Abstract
A switch circuit includes a first MOS transistor and a second MOS transistor of a same conductivity type connected in parallel between a first terminal and a second terminal of the switch circuit, the first and second MOS transistors having respective gate terminals coupled to the control terminal to receive a control signal to turn the first and second MOS transistors on or off. The first MOS transistor is characterized by a first reverse gate-to-drain capacitance (C) and the second MOS transistor is characterized by a second Cthat is greater than the first C.