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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10256234 B1

PDFFull Text
Date of Patent:
Apr. 09, 2019

Filed:

Jul. 22, 2016

Semiconductor device

Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Hiromitsu Tanabe, Kariya, JP;

Kenji Kouno, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Nikolay K Yushin

Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 27/06 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 21/22 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 27/07 (2006.01); H01L 21/00 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 21/221 (2013.01); H01L 27/0727 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/739 (2013.01); H01L 29/7391 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 21/26506 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate provided with an IGBT cell having a collector region and a diode cell having a cathode region, a first defect layer and a second defect layer in a drift region. A region present in the drift region and surrounded by an interface between the IGBT cell and the diode cell orthogonal to a first principal plane, and a plane passing through a boundary between the collector region and the cathode region on a boundary line along an interface between the collector region and the drift region and crossing the first principal plane at an angle of 45 degrees is referred to as a boundary region. The diode cell satisfies a relationship of S>S, in which S is an area occupied by the boundary region and Sis an area occupied by the diode cell in a surface of the drift region.

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