The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Jan. 20, 2017
Imec, Leuven, BE;
Mikael Detalle, Limal, BE;
Eric Beyne, Leuven, BE;
IMEC, Leuven, BE;
Abstract
The disclosed technology relates generally to a semiconductor device package comprising a metal-insulator-metal capacitor (MIMCAP). In one aspect, the MIMCAP comprises portions of a first and second metallization layers in a stack of metallization layers, e.g., copper metallization layers formed by single damascene processes. The MIMCAP comprises a bottom plate formed in the first metallization layer, a first conductive layer on and in electrical contact with the bottom plate, a dielectric layer on and in contact with the first conductive layer, a second conductive layer on and in contact with the dielectric layer, and a top plate formed in the second metallization layer, on and in electrical contact with the second metal plate. The electrical contacts to the bottom and top plates of the MIMCAP formed in the first and second metallization layer are thereby established without forming separate vias between the plates and the metallization layers. In addition, the first conductive layer of the MIMCAP may extend beyond the surface of the dielectric and the second layer for forming other structures.