The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Mar. 23, 2018
Sandisk Technologies Llc, Plano, TX (US);
Noritaka Fukuo, Yokkaichi, JP;
Hokuto Kodate, Yokkaichi, JP;
Eiichi Fujikura, Yokkaichi, JP;
Akinori Yutani, Yokkaichi, JP;
Kengo Miura, Yokkaichi, JP;
Masaomi Koizumi, Yokkaichi, JP;
Hidehito Koseki, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A semiconductor structure includes a field effect transistor located on a semiconductor substrate, a silicon oxide liner contacting at least a portion of the semiconductor substrate, a silicon nitride liner contacting a top surface and a sidewall of the silicon oxide liner and contacting a top surface of the semiconductor substrate in a seal region, a silicon nitride diffusion barrier layer including a planar bottom surface that contacts top surfaces of vertically extending portions of the silicon nitride liner, and a silicon oxide material portion overlying the silicon nitride diffusion barrier layer. A combination of the silicon nitride liner and the silicon nitride diffusion barrier layer constitutes a hydrogen diffusion barrier structure that continuously extends from the seal region and over the field effect transistor.