The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Aug. 28, 2015
Applicant:
The University of Tokyo, Bunkyo-ku, Tokyo, JP;
Inventors:
Junichi Takeya, Tokyo, JP;
Junshi Soeda, Tokyo, JP;
Assignee:
THE UNIVERSITY OF TOKYO, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/13 (2006.01); H01L 23/14 (2006.01); H01L 29/786 (2006.01); H01L 25/00 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 23/14 (2013.01); H01L 23/13 (2013.01); H01L 25/00 (2013.01); H01L 29/786 (2013.01); H01L 51/0003 (2013.01); H01L 51/052 (2013.01); H01L 51/0558 (2013.01);
Abstract
The present invention provides a semiconductor film, a field effect transistor, and a method of fabricating the semiconductor film that has one or two or more semiconductor portions, which are formed from a semiconductor material, and one or two or more polymer portions, which are formed from a polymer material. The semiconductor portion and the polymer portion are adjacent to each other and are integrated.