The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Oct. 26, 2017
Renesas Electronics Corporation, Tokyo, JP;
Tatsuya Usami, Ibaraki, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
To improve the characteristics of a semiconductor device having a substrate contact formed in a deep trench. In a method of forming a plug PSUB in a deep trench DTthat penetrates an n-type buried layer NBL and reaches a p-type epitaxial layer PEP, the plug PSUB is formed in the deep trench DTafter a metal silicide layer SILis formed in the p-type epitaxial layer PEP. The metal silicide layer SILis formed using a PVD-first metal film (a first metal film formed by PVD). A first barrier metal film BMat the bottom of the plug PSUB is a CVD-second metal film (a second metal film formed by CVD). The first metal film is a metal film different from the second metal film.