The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Mar. 11, 2014
Applicants:
Rachael L. Myers-ward, Springfield, VA (US);
David Kurt Gaskill, Alexandria, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Robert E. Stahlbush, Silver Spring, MD (US);
Nadeemmullah A. Mahadik, Springfield, VA (US);
Virginia D. Wheeler, Alexandria, VA (US);
Inventors:
Rachael L. Myers-Ward, Springfield, VA (US);
David Kurt Gaskill, Alexandria, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Robert E. Stahlbush, Silver Spring, MD (US);
Nadeemmullah A. Mahadik, Springfield, VA (US);
Virginia D. Wheeler, Alexandria, VA (US);
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/02 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); C30B 25/18 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02658 (2013.01); C30B 25/183 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/02617 (2013.01); H01L 21/3065 (2013.01);
Abstract
A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.