The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Nov. 28, 2016
Applicant:
Alliance for Sustainable Energy, Llc, Golden, CO (US);
Inventors:
Emily L. Warren, Golden, CO (US);
Adele Clare Tamboli, Golden, CO (US);
Assignee:
Alliance for Sustainable Energy, LLC, Golden, CO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02647 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02546 (2013.01); H01L 21/02639 (2013.01); H01L 21/02642 (2013.01);
Abstract
Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.
Warren, Emily. (2019). Selective area growth of semiconductors using patterned sol-gel materials (U.S. Patent No. 10256093). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10256093
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile