The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Oct. 11, 2016
Kobe Steel, Ltd., Kobe-shi, JP;
Samsung Display Co., Ltd., Yongin, KR;
Hiroaki Tao, Kobe, JP;
Aya Miki, Kobe, JP;
Shinya Morita, Kobe, JP;
Satoshi Yasuno, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Jae Woo Park, Seongnam, KR;
Je Hun Lee, Seoul, KR;
Byung Du Ahn, Hwaseong, KR;
Gun Hee Kim, Hwaseong, KR;
Kobe Steel, Ltd., Kobe-shi, JP;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≤0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5.[In]/([In]+[Zn]+[Sn])≤0.3  (1),[In]/([In]+[Zn]+[Sn])≤1.4×{[Zn]/([Zn]+[Sn])}−0.5  (2),[Zn]/([In]+[Zn]+[Sn])≤0.83  (3),and0.1≤[In]/([In]+[Zn]+[Sn])  (4).According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.