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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10255961 B1

PDFFull Text
Date of Patent:
Apr. 09, 2019

Filed:

Dec. 22, 2017

Data storage in synthetic antiferromagnets included in magnetic tunnel junctions

Applicant:

Everspin Technologies, Inc., Chandler, AZ (US);

Inventors:

Han-Jong Chia, Chandler, AZ (US);

Sumio Ikegawa, Phoenix, AZ (US);

Michael Tran, Woodlands, SG;

Jon Slaughter, Albany, NY (US);

Assignee:

Everspin Technologies, Inc., Chandler, AZ (US);

Attorney:

Bookoff McAndrews, PLLC

Primary Examiner:

Hoai V Ho

Assistant Examiner:

Jay Radke

Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01F 10/32 (2006.01); H01L 43/10 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/5607 (2013.01); H01F 10/329 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetoresistive memory device that stores data in the synthetic antiferromagnet (SAF) included in each spin-torque memory cell provides for more robust data storage. In normal operation, the memory cells use the free portion of the memory cell for data storage. Techniques for storing data in the reference portions of memory cells are presented, where an unbalanced SAF that includes ferromagnetic layers having different magnetic moments is used to lower the switching barrier for the SAF and allow for writing data values to the SAF using lower currents and magnetic fields than would be required for a balanced SAF.

Find Patent Forward Citations

Chia, Han-Jong. (2019). Data storage in synthetic antiferromagnets included in magnetic tunnel junctions (U.S. Patent No. 10255961). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10255961

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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