The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Jun. 01, 2016
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Yoshihiro Ogiso, Atsugi, JP;
Josuke Ozaki, Atsugi, JP;
Norihide Kashio, Atsugi, JP;
Nobuhiro Kikuchi, Atsugi, JP;
Masaki Kohtoku, Atsugi, JP;
NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Tokyo, JP;
Abstract
To provide a Mach-Zehnder (MZ) type semiconductor optical modulation element that can be used as a modulator, which is ultrafast and excellent in electrical stability. A semiconductor optical modulation element of a Mach-Zehnder type that performs modulation of light using a refractive index modulation region where a refractive index of the light guided to an optical waveguide is modulated and an input and output region where multiplexing/demultiplexing of the light split in the refractive index modulation region is performed, characterized in that in the refractive index modulation region of the optical waveguide, an n-type clad layer, an i core layer, and a p-type clad layer are stacked in the order from a top layer on a substrate surface equivalent to a (100) plane of a sphalerite-type seminsulating semiconductor crystal substrate, the n-type clad layer is formed in a ridge shape in an inverted mesa direction, and a capacitancl-oaded electrode is provided on the n-type clad layer.