The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

Jul. 12, 2016
Applicant:

Consejo Superior DE Investigaciones Cientificas (Csic), Madrid, ES;

Inventors:

Antonio Baldi Coll, Cerdanyola del Valles, ES;

César Fernández Sánchez, Cerdanyola del Valles, ES;

Alfredo Cadarso Busto, Cerdanyola del Valles, ES;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); G01N 27/30 (2006.01);
U.S. Cl.
CPC ...
G01N 27/414 (2013.01); G01N 27/301 (2013.01);
Abstract

The present invention concerns an ion sensor based on differential measurement, that by means of at least two ion-sensitive field-effect transistors, compares the concentration of certain ions in a solution to be measured with the concentration of certain ions in a reference solution contained in a micro-reservoir with a micro-channel. To do this, the micro-reservoir and the micro-channel cover at least the gate of one of the ion-sensitive field-effect transistors and make up a unit partially filled with a porous material that covers the entirety of the aforementioned gate and at least the base of the micro-channel.


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