The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Jan. 13, 2014
Applicant:
Denso Corporation, Kariya, Aichi-pref., JP;
Inventors:
Hiroyuki Kondo, Kariya, JP;
Shoichi Onda, Toyokawa, JP;
Yasuo Kitou, Okazaki, JP;
Hiroki Watanabe, Tokai, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 23/00 (2006.01); C30B 23/02 (2006.01); C01B 32/956 (2017.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C01B 32/956 (2017.08); C30B 23/00 (2013.01); C30B 23/025 (2013.01);
Abstract
A silicon carbide single crystal includes a spiral dislocation. The spiral dislocation includes a L dislocation having a burgers vector defined as b, which satisfies an equation of b><0001>+1/3<11-20>. The L dislocation has a density equal to or lower than 300 dislocations/cm, preferably, 100 dislocations/cm, since the L dislocation has large distortion and causes generation of leakage current. Thus, the silicon carbide single crystal with high quality is suitable for a device production which can suppress the leakage current.