The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Jul. 20, 2017
Src Corporation, Danwon-gu, Ansan-si, KR;
Kang Hyung Kim, Gyeonggi-Do, KR;
Kwan Sub Maeng, Gyeonggi-Do, KR;
Chol Woo Park, Gyeonggi-Do, KR;
Se Won Cha, Gyeonggi-Do, KR;
Se Youn Hong, Gyeonggi-Do, KR;
Byung Hee Hong, Gyeonggi-do, KR;
Myung Hee Jung, Gyeonggi-Do, KR;
Kyung Eun Kim, Incheon, KR;
Su Beom Park, Seoul, KR;
SRC Corporation, Gyeonggi-Do, KR;
Abstract
The present invention relates to a method for producing graphene on a face-centered cubic metal catalyst having a plane oriented in one direction, and more particularly to a method of producing graphene on a metal catalyst having the (100) or (111) crystal structure and a method of producing graphene using a catalyst metal foil having a single orientation, obtained by electroplating a metal catalyst by a pulse wave current and annealing the metal catalyst. The invention also relates to a method of producing graphene using a metal catalyst, and more particularly to a method of producing graphene, comprising the steps of: alloying a metal catalyst with an alloying element; forming step structures on the metal catalyst substrate in an atmosphere of a gas having a molecular weight of carbon; and supplying hydrocarbon and hydrogen gases to the substrate. On unidirectionally oriented metal catalyst prepared according to the present invention, graphene can be grown uniformly and epitaxially. Moreover, a method for producing graphene according to the present invention can form monolayer graphene by epitaxially growing graphene while increasing the growth rate of graphene.