The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Sep. 18, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Francesco Polo, Arnoldstein, AT;

Richard Gaggl, Poertschach am, AT;

Benno Muehlbacher, St. Magdalen, AT;

Luca Valli, Villach, AT;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 19/04 (2006.01); H04R 3/00 (2006.01); H04R 19/00 (2006.01);
U.S. Cl.
CPC ...
H04R 19/04 (2013.01); H04R 3/00 (2013.01); H04R 19/005 (2013.01); H04R 2201/003 (2013.01);
Abstract

A circuit for biasing a MEMS microphone includes a first group of serially-coupled transistors coupled between a first node and a second node, a second group of serially-coupled transistors coupled between the first node and the second node, and a voltage divider circuit coupled to the second node having a number of outputs, a first group of outputs being coupled to corresponding control nodes associated with the first group of serially-coupled transistors, and a second group of outputs different from the first group of outputs coupled to corresponding control nodes associated with the second group of serially-coupled transistors, the control nodes being either bulk nodes or gate nodes.


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