The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2019
Filed:
May. 20, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 5/04 (2006.01); H02H 7/20 (2006.01); H01L 23/525 (2006.01); H01L 27/02 (2006.01); H01L 29/866 (2006.01); H02H 3/20 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H02H 7/205 (2013.01); H01L 23/5256 (2013.01); H01L 27/0255 (2013.01); H01L 27/0288 (2013.01); H01L 29/866 (2013.01); H02H 3/20 (2013.01); H01L 23/49562 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/4903 (2013.01);
Abstract
A semiconductor device, overvoltage detection structure is described that includes a current path including a Zener diode connected in series with a fuse. The Zener diode is configured to conduct a current in response to an overvoltage condition at a semiconductor device and the fuse is configured to permanently break the current path of the overvoltage detection structure in response to the Zener diode conducting the current.