The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2019

Filed:

Nov. 27, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hiromasa Shibuya, Suwon-si, KR;

Tadao Yagi, Hwaseong-si, KR;

Rie Sakurai, Suwon-si, KR;

Yeong Suk Choi, Suwon-si, KR;

Yutaka Matsuo, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07C 23/46 (2006.01); H01L 51/00 (2006.01); C07C 25/18 (2006.01); H01L 51/42 (2006.01); H01L 27/30 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0047 (2013.01); C07C 23/46 (2013.01); C07C 25/18 (2013.01); C07C 2604/00 (2017.05); H01L 27/307 (2013.01); H01L 51/001 (2013.01); H01L 51/424 (2013.01);
Abstract

A fullerene derivative may be included in photoelectric devices and image sensor. Optical absorption characteristics of a thin film including the fullerene derivative may be shifted toward a short wavelength compared with those of the thin film including the unsubstituted C60 fullerene, for example, a thin film including the fullerene derivative may be associated with a peak absorption wavelength (λ) that is be shorter than that of a thin film including the unsubstituted C60 fullerene.


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